| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-48 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2019-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281e76aa1a27862e903880ff17566f55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d6fa31928941f337b7f550b8c6026d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14056f7dc72b8295c19863efc4d65bff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d1067971be0beb48d40f4f191061970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c423becbd0be7e237d650bcc73fc63e0 |
| publicationDate |
2021-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11189484-B2 |
| titleOfInvention |
Semiconductor nitridation passivation |
| abstract |
Methods, apparatuses, and systems related to a semiconductor nitridation passivation are described. An example method includes performing a dry etch process on a semiconductor structure on a wafer in a semiconductor fabrication process. The method further includes performing a dry strip process on the semiconductor structure. The method further includes performing a first wet strip clean process on the semiconductor. The method further includes performing a second wet strip clean process on the semiconductor. The method further includes performing a nitridation passivation on the semiconductor structure to avoid oxidization of the semiconductor structure. The method further performing a spacer material deposition on the semiconductor structure. |
| priorityDate |
2019-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |