http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158517-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bb7295a31b9398be7c67cf6cb4c2b7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd4abd1ded52efc25ad2a2897dd9f620 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82d1cac5fc7895353ecb9ec1b8a1ad50 |
| publicationDate | 2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11158517-B2 |
| titleOfInvention | Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing |
| abstract | A method for selective plasma etching of silicon oxide relative to silicon nitride. The method includes a) providing a substrate containing a silicon oxide film and a silicon nitride film, b) exposing the substrate to a plasma-excited treatment gas containing 1) H 2 and 2) HF, F 2 , or both HF and F 2 , to form a silicon oxide surface layer with reduced oxygen content on the silicon oxide film and form an ammonium salt layer on the silicon nitride film, c) exposing the substrate to a plasma-excited halogen-containing gas that reacts with and removes the silicon oxide surface layer from the silicon oxide film, and d) repeating steps b) and c) at least once to further selectively etch the silicon oxide film relative to the ammonium salt layer on the silicon nitride film. The ammonium salt layer may be removed when the desired etching has been achieved. |
| priorityDate | 2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.