| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate |
2019-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e36c0bb049be2b5f3146ba9beb908a8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec3357243241c80310f2da6e6e278514
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e15c5959c654d9592b2eced0ddbca933 |
| publicationDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11133177-B2 |
| titleOfInvention |
Oxidation reduction for SiOC film |
| abstract |
Embodiments described herein generally related to methods for forming a flowable low-k dielectric layer over a trench formed on a surface of a patterned substrate. The methods include delivering a silicon and carbon containing precursor into a substrate processing region of a substrate processing chamber for a first period of time and a second period of time, flowing an oxygen-containing precursor into a remote plasma region of a plasma source while igniting a remote plasma to form a radical-oxygen precursor, flowing the radical-oxygen precursor into the substrate processing region at a second flow rate after the first period of time has elapsed and during the second period of time, and exposing the silicon and carbon containing dielectric precursor to electromagnetic radiation for a third period of time after the second period of time has elapsed. |
| priorityDate |
2018-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |