| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a68790a12228f5b99e176e8aacff640a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-645 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 |
| filingDate |
2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e07a6a29cc2d0f2e793a23422d1f7913
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4225acc4a63daaa09fab777a4f75af31 |
| publicationDate |
2021-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11127719-B2 |
| titleOfInvention |
Face-to-face dies with enhanced power delivery using extended TSVS |
| abstract |
A TSV of a first semiconductor die may extend from a semiconductor substrate of the first semiconductor die through at least one metallization layer of the die to connect to a metallization layer to supply power to the second semiconductor die. By extending the TSV, resistance may be reduced, allowing for enhanced power delivery to the second semiconductor die. Resistance may be further reduced by allowing for the TSV to connect to a thicker metallization layer than would otherwise be possible. Also, in some embodiments, the TSV may connect to a metallization layer that is suitable for supplying power to both semiconductor dies. The first semiconductor die may be a top die or a bottom die in a face-to-face arrangement. Disclosed concepts may be extended to any number of dies included in a die stack that includes the face-to-face arrangement. |
| priorityDate |
2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |