| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6813f68bbadbcaae3828aa035190fede
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89b170728e9b1de7f20c98f2fbc2a113 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2020-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05dbe4d39d0daa7f9a2dadc15dbcf77c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_865f29b57d5e9af7dfcd0f44ba953be0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc04c2b338975961a41d36f84b406c8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d58cbccb06147315f6fd0cf39c327c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c42e3207f7124d3c0f10bf6864a6e5ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51cffe52979b96db83815c55fdb89197 |
| publicationDate |
2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11043393-B2 |
| titleOfInvention |
Ozone treatment for selective silicon nitride etch over silicon |
| abstract |
Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189464-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495456-B2 |
| priorityDate |
2019-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |