| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45559 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2016-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_188defd48490e70eee1f39ee7ae27955
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01a38b61d46964b33cfeb7918af223c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6cbac52c0fbc5ce308f70cfed86e935 |
| publicationDate |
2021-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11035039-B2 |
| titleOfInvention |
Compositions and methods for depositing silicon nitride films |
| abstract |
Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 . |
| priorityDate |
2015-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |