| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6719
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7587df8581f660685510c1240a0da74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_920a76d3a2147f3dec673e8001c0800d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b07a70d0c6c26da90676a875ef5aa3e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6649b81c3b891d150780c9651224fba5 |
| publicationDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11024514-B2 |
| titleOfInvention |
Etching method and etching apparatus |
| abstract |
There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner. |
| priorityDate |
2018-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |