Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80973ca8e1b3acbac7208592978d413c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0272 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate |
2018-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c416b3822dab57d14a2ffd0dbb61e62 |
publicationDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10978569-B2 |
titleOfInvention |
Process of forming nitride semiconductor device |
abstract |
A process of forming a nitride semiconductor device is disclosed. The process first deposits a silicon nitride (SiN) film on a semiconductor layer by the lower pressure chemical vapor deposition (LPCVD) technique at a temperature, then, forming an opening in the SiN film for an ohmic electrode. Preparing a photoresist on the SiN film, where the photoresist provides an opening that fully covers the opening in the SiN film, the process exposes a peripheral area around the opening of the SiN film to chlorine (Cl) plasma that may etch the semiconductor layer to form a recess therein. Metals for the ohmic electrode are filled within the recess in the semiconductor layer and the peripheral area of the SiN film. Finally, the metals are alloyed at a temperature lower than the deposition temperature of the SiN film. |
priorityDate |
2017-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |