| abstract |
A method of manufacturing a field effect transistor includes forming a fin on a substrate, forming source and drain electrodes on opposite sides of the fin, forming a gate stack on a channel portion of the fin between the source and drain electrodes, forming gate spacers on extension portions of the fin on opposite sides of the gate stack, removing at least portions of the gate spacers to expose the extension portions of the fin, and hydrogen annealing the extension portions of the fin. Following the hydrogen annealing of the extension portions of the fin, the channel portion of the fin has a first width and the extension portions of the fin have a second width greater than the first width. |