| abstract |
A semiconductor device is provided including a substrate, a first gate structure, a first contact plug and a power rail. The substrate includes first and second cell regions extending in a first direction, and a power rail region connected to each of opposite ends of the first and second cell regions in a second direction. The first gate structure extends in the second direction from a boundary area between the first and second cell regions to the power rail region. The first contact plug is formed on the power rail region, and contacts an upper surface of the first gate structure. The power rail extends in the first direction on the power rail region, and is electrically connected to the first contact plug. The power rail supplies a turn-off signal to the first gate structure through the first contact plug to electrically insulate the first and second cell regions. |