| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c19a91365ed494d9fe27d24190d4459f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1469 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30 |
| filingDate |
2020-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8887987cef9d42e7f17cf1f0c37880c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b12eb33aaad907fe270a5953e34507a0 |
| publicationDate |
2021-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10910467-B2 |
| titleOfInvention |
Capacitor including first electrode, dielectric layer, and second electrode, image sensor, method for manufacturing capacitor, and method for manufacturing image sensor |
| abstract |
A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less. |
| priorityDate |
2017-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |