| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2011-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cf92513f61f53e32d51cc310367a073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_925f8cccf3444b9532ced963d06fc8f2 |
| publicationDate |
2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012080094-A |
| titleOfInvention |
Semiconductor memory device and manufacturing method thereof |
| abstract |
A device with high reliability and high yield is provided by improving both the characteristics of a transistor in a semiconductor memory device and the leakage current characteristics of a capacitor. In a capacitor having a dielectric film 103 mainly composed of zirconium oxide on a lower electrode 102 made of titanium nitride, a dielectric film mainly composed of zirconium oxide in a microcrystalline state is formed, and a secondary film is formed. The first protective film 110 containing a titanium compound as a main component is formed under conditions that do not involve typical crystal grain growth, and then the upper electrode 111 is formed. Even if hydrogen annealing for reducing the interface state of the transistor is performed, an increase in leakage current can be suppressed. [Selection] Figure 5 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019054237-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615247-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016131216-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910467-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290802-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7157952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230072480-A |
| priorityDate |
2010-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |