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publicationDate 2021-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10886368-B2
titleOfInvention I/O device scheme for gate-all-around transistors
abstract An I/O device nanosheet material stack of suspended semiconductor channel material nanosheets is provided above a semiconductor substrate. A physically exposed portion of each suspended semiconductor channel material nanosheet is thinned to increase the inter-nanosheet spacing between each vertically stacked semiconductor channel material nanosheet. An I/O device functional gate structure is formed wrapping around the thinned portion of each suspended semiconductor channel material nanosheet.
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