| abstract |
In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. The method further comprises repeating (a), (b), (c), and (d) until a predetermined number of first film layers and second film layers have been deposited on the substrate. The first film layer is a silicon oxide layer and the second film layer is a silicon nitride layer. |