http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727332-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_800cb9ea13490b2be4ac36483ca026bf |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c134fa5acf870af92c78798059964dc |
| publicationDate | 2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10727332-B2 |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device includes a substrate, a semiconductor body and a metal layer between the substrate and the semiconductor body. The device further includes first and second electrodes, a first control electrode between the semiconductor body and the first electrode; and a second control electrode between the semiconductor body and the second electrode. The semiconductor body includes a first to fifth semiconductor layers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode. The third semiconductor layer is selectively provided between the second semiconductor layer and the first electrode. The fourth semiconductor layer is provided between the first semiconductor layer and the second electrode. The fifth semiconductor layer selectively provided between the fourth semiconductor layer and the second electrode. The first, third and fifth semiconductor layers are of a first conductivity type. The second and fourth semiconductor layers are of a second conductivity type. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021288154-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728396-B2 |
| priorityDate | 2018-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.