| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32155 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3215 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2018-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9cb6677ede4d971d053b22e9e8a8165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_542e04724d06ea763973aa29a6ca2bae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9081e2a296cdb03df771c590dadd8175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a933ff000e41d41bdce5cbd8918094e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b7461bf335f46066e6f3d46aafb945f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2bba2df0b4c19091ce081dad80e19d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3bcb4b6515afc373d8ab7871a645818
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c38d92a4c6eb87d57d0508185efe8183 |
| publicationDate |
2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10727061-B2 |
| titleOfInvention |
Method for integrated circuit patterning |
| abstract |
An exemplary method includes forming a hard mask layer over an integrated circuit layer and implanting ions into a first portion of the hard mask layer without implanting ions into a second portion of the hard mask layer. An etching characteristic of the first portion is different than an etching characteristic of the second portion. After the implanting, the method includes annealing the hard mask layer. After the annealing, the method includes selectively etching the second portion of the hard mask layer, thereby forming an etching mask from the first portion of the hard mask layer. The method can further include using the etching mask to pattern the integrated circuit layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11610778-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991583-B2 |
| priorityDate |
2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |