Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2018-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b90232432b1b2a1f0cdb01aa84d55af9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71ed8d1014ded9f660a7efc37fd1c00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e89aa741903ae9e663d6b0e913e32d9a |
publicationDate |
2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10686057-B2 |
titleOfInvention |
Vertical transport FET devices having a sacrificial doped layer |
abstract |
Methods of fabrication and semiconductor structures includes vertical transport field effect transistors (VTFETs) including a top source/drain extension formed with a sacrificial doped layer. The sacrificial doped layer provides the doping source to form the extension and protects the top of the fin during fabrication so as to prevent thinning, among other advantages. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021104628-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682727-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021119019-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916638-B2 |
priorityDate |
2018-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |