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filingDate 2019-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c548f4a428160e559366adc22d33b76
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publicationDate 2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10685883-B1
titleOfInvention Method of wafer dicing and die
abstract A method of wafer dicing and a die are provided. The method includes the following processes. A wafer is provided, the wafer includes a plurality of die regions and a scribe region between the die regions. The scribe region includes a substrate, and a dielectric layer and a test structure on the substrate, the test structure is disposed in the dielectric layer. A first removal process is performed to remove the test structure and the dielectric layer around the test structure, so as to expose the substrate. The first removal process includes performing a plurality of etching cycles, and each etching cycle includes performing a first etching process to remove a portion of the test structure and performing a second etching process to remove a portion of the dielectric layer. A second removal process is performed to remove the substrate in the scribe region, so as to form a plurality of dies separated from each other.
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Total number of triples: 43.