| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7371
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| filingDate |
2018-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a42ba6f9e1eb3a9dda906ea7b76faa7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_641f1fe186d2a9718b7ab4c54e7419c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dab7e92908afbb51e4f8ce1d4fc0c76 |
| publicationDate |
2020-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10680086-B2 |
| titleOfInvention |
Radio frequency silicon-on-insulator integrated heterojunction bipolar transistor |
| abstract |
A heterojunction bipolar transistor is integrated on radio frequency (RF) dies of different sizes. The heterojunction bipolar transistor includes an emitter on a first-side of a semiconductor-on-insulator (SOI) layer of an SOI substrate. The emitter is accessed from the first-side while a collector is accessed from a second-side of the SOI substrate. One or more portions of a base of the heterojunction bipolar transistor is between the emitter and one or more portions of the collector. The heterojunction bipolar transistor also includes a compound semiconductor layer between the collector and the emitter. The compound semiconductor layer carries a charge between the emitter and the collector. |
| priorityDate |
2018-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |