| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61N5-06 |
| filingDate |
2017-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_800d8a2943deaf1c58f620cf99a39baa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_054644cf3a0f4b00dcbdcf520b2c4e2f |
| publicationDate |
2020-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10644194-B2 |
| titleOfInvention |
Light-emitting device, light-emitting device package, and light-emitting module |
| abstract |
Disclosed in an embodiment are a light emitting device, and a light emitting device package and a light emitting module having the same. According to an embodiment, the light emitting device comprises: a first superlattice layer arranged on an AlN template layer, and a first semiconductor layer, a second superlattice layer, and a first conductive semiconductor layer; an active layer having a quantum well layer and a quantum wall layer arranged on the first conductive semiconductor layer; and an electron blocking layer arranged on the active layer and a second conductive semiconductor layer. A first and second layers of the first superlattice layer, the first semiconductor layer, and third and fourth layers of the second superlattice layer include AlGaN-based semiconductors, and an aluminum composition of the third layer is higher than an aluminum composition of the fourth layer and has the same composition range as that of an aluminum composition of the first semiconductor layer. The active layer emits ultraviolet light. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019393378-A1 |
| priorityDate |
2016-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |