http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160001951-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
filingDate | 2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_076c17d8034c11ea1a5cc267eb86d313 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_140a6209ea73ceb9b0e46a9784d7536d |
publicationDate | 2016-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20160001951-A |
titleOfInvention | Light emitting device and lighting system having the same |
abstract | A light emitting device according to an embodiment includes a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer And a second hole injection layer disposed on the first hole injection layer and doped with a p-type dopant, the first hole injection layer being disposed between the active layer and the second conductivity type semiconductor layer and being undoped, Layer. The embodiment has the effect of improving the output voltage and the light efficiency measurement voltage in a state in which the operating voltage is maintained by forming the layer in which the p-type dopant is removed in the hole injection layer. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10644194-B2 |
priorityDate | 2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.