Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-498 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-02 |
filingDate |
2018-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f3faa3b4c5b58055e0834fc95099303 |
publicationDate |
2019-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10332907-B2 |
titleOfInvention |
Semiconductor memory device with three-dimensional memory cells |
abstract |
According to an embodiment, a semiconductor memory device comprises: a semiconductor substrate; a memory cell array configured having a plurality of memory units, each of the memory units including a plurality of memory cells connected in series, the plurality of memory cells being stacked, the plurality of memory units involving a first memory unit and a second memory unit; and a plurality of bit lines connected to ends of each of the memory units in the memory cell array. The first memory unit and the second memory unit are arranged in a staggered manner by the first memory unit being displaced in a row direction with respect to the second memory unit by an amount less than an arrangement pitch in a row direction of the first memory unit or the second memory unit. |
priorityDate |
2011-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |