| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-044 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2018-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06aabceddd22ec32b0d5a5906dcb73e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ed9ae7df19faf2b6907d8acb545d0b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de8a229a0b0db4511796f4305e5563f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce4576fe8b1ed6a636818d9f7c38c71f |
| publicationDate |
2019-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10312073-B2 |
| titleOfInvention |
Selective removal of carbon-containing and nitrogen-containing silicon residues |
| abstract |
A semi-aqueous wet clean system and method for removing carbon-containing silicon material (e.g., plasma residue) or nitrogen-containing silicon material (e.g., plasma residue) includes a hydroxyl-terminated organic compound, a diol, and a fluoride ion donor material. The system is configured to protect silicon oxide and amorphous silicon during a post-dry-etch wet clean. The wet clean system is configured to selectively remove carbon-containing or nitrogen-containing plasma residue. pH of the wet clean system can be modified to tune selectivity for removal of carbon-containing or nitrogen-containing plasma residues. As a result, positive TEOS recession of less than about 3 nanometers may be achieved. Additionally, the wet clean system can be adapted for reclamation and subsequent reuse. |
| priorityDate |
2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |