| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa7edb8bda1c46e530f1dca199c0fc71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_240098e1819feb3b0f91828e6b9ea99c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e96f6cd083d72393e3aa57a3b23b66f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa43ea47dbb5713b190565f90c3e462b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d123798fabc6aac58fec6e99ee7e9f8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2015-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15f529036913aeb346de47acacd6dfb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f13a8c6ff5cd52c165b856cf45e15dc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ca5436dcbffd45ab026da05b79c3f55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00fa74abe562e11472502130c1f0f56b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c824321898970e98a246018f5ee8faa5 |
| publicationDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10297673-B2 |
| titleOfInvention |
Methods of forming semiconductor devices including conductive contacts on source/drains |
| abstract |
Methods of forming a semiconductor device are provided. The methods may include forming a plurality of fin-shaped channels on a substrate, forming a gate structure crossing over the plurality of fin-shaped channels and forming a source/drain adjacent a side of the gate structure. The source/drain may cross over the plurality of fin-shaped channels and may be electrically connected to the plurality of fin-shaped channels. The methods may also include forming a metallic layer on an upper surface of the source/drain and forming a conductive contact on the metallic layer opposite the source/drain. The conductive contact may have a first length in a longitudinal direction of the metallic layer that is less than a second length of the metallic layer in the longitudinal direction of the metallic layer. |
| priorityDate |
2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |