Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
filingDate |
2017-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74bb981ea1d08731e68abe871800725c |
publicationDate |
2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10269956-B2 |
titleOfInvention |
Asymmetric vertical device |
abstract |
A vertical FET with asymmetrically positioned source region and drain region is provided. The source region of the vertical FET is separated from a gate electrode by a gate dielectric and the drain region of the vertical FET is separated from the gate electrode by a drain spacer formed therebetween. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021104628-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971367-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10755937-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682727-B2 |
priorityDate |
2017-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |