| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_060130b801da4a36bbf579f982f96424 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa2cadc122b37815df9690d6f1d84d62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d337ee61f099feb3ba97c2f401bf8025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_644275e69f21454c255271b9ab3c87f7 |
| publicationDate |
2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10256138-B2 |
| titleOfInvention |
Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding |
| abstract |
A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019237358-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825719-B2 |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |