| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0813
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0688 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
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| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
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| filingDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48dc7f8115a7a7cc2178c058ef990c26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a5a086a96f70a911a4e7926d10a898d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b6a58bb9c4f006757c262fdf7d89d05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8df0f2cd66458a861c0993cf7cabe61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e51486daefb206f0fcb82d8a4d8c712 |
| publicationDate |
2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10256097-B2 |
| titleOfInvention |
Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure |
| abstract |
A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. Between neighboring ones of the interface particles, the metal contact structure directly adjoins the silicon carbide semiconductor body. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11282927-B2 |
| priorityDate |
2016-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |