| abstract |
In a silicon carbide (SiC) semiconductor device, a back electrode having excellent ohmic characteristics with a SiC substrate and excellent adhesion and durability is provided. A SiC semiconductor device includes a back electrode including a nickel film formed on a back surface of a SiC substrate, and a barrier film having an opening between the SiC substrate and the nickel film. With. Between the SiC substrate 1 and the nickel film 3, a nickel silicide reaction layer 4 is formed in the opening 2 a portion of the barrier film 2. [Selection] Figure 1 |