| abstract |
Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer. |