http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10083964-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
filingDate 2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80ea634facba60c0f118b7593ebf4ea1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7
publicationDate 2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10083964-B1
titleOfInvention Double diffusion break gate structure without vestigial antenna capacitance
abstract A double diffusion break (DDB) gate structure is provided by removing the vestigial antenna to provide a space and the space is filled, at least in part, with an interlevel dielectric (ILD) material. Removal of the vestigial antenna from the DDB gate structure will reduce the device capacitance and improve device performance, while enabling DDB in tight integration schemes.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11482445-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094578-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020373197-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622479-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475693-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11121023-B2
priorityDate 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846491-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017098641-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017062475-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653583-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018006035-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548998
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID28117
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23969
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523132
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419575161
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326954

Total number of triples: 53.