| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f1e9d8171ef4ac71159404203e209f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_029f7117d497f3aa1461de281c6dfc38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c44015c189c6140a12f9734171af324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_806c197527121f92fad5a570d434d24f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a8c1f8abb802f8c18d9c1d5b603e744
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59c6060305c217f34fb5d862396f4bd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71024cfc0a109924d230e084d2d56c03 |
| publicationDate |
2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10079177-B1 |
| titleOfInvention |
Method for forming copper material over substrate |
| abstract |
A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with H 2 gas at a first pressure. The cobalt layer is treated with a H 2 plasma at a second pressure. The second pressure is lower than the first pressure. |
| priorityDate |
2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |