| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 |
| filingDate |
2016-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c72f94301d65e9b62c17eb931d21e81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bbdd56dc9f6fb60849c1037867e8b84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45beafbb26ebc7949382ba1308575265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0abf10c1676d07986c5bef6a441a2419
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281ed4ceb0c16d78fa93a4d64f7cc052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68b3707fc15c5ee12d4006022e0aaf5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b2d9a0995243197245b2e6932adcb45 |
| publicationDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10074563-B2 |
| titleOfInvention |
Structure and formation method of interconnection structure of semiconductor device |
| abstract |
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a spacer element over a sidewall of the gate stack. The spacer element is substantially free of oxygen. The semiconductor device structure also includes a dielectric layer over the semiconductor substrate, and the dielectric layer surrounds the gate stack and the spacer element. The semiconductor device structure further includes a conductive contact penetrating through the dielectric layer and electrically connected to a conductive feature over the semiconductor substrate. An angle between a sidewall of the conductive contact and a top surface of the spacer element is in a range from about 90 degrees to about 120 degrees, and the conductive contact covers a portion of the spacer element. |
| priorityDate |
2016-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |