| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2017-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_022b7e9810ffa798053646c3f61b3a5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8c8f5bc33359c190521c74069ae1172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f76000d520f6bfaff72e6fd27b960a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd0185dd73b2eca72253f3afdd41bc87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_701816bed27037a30a99ee9bd9416a20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_637b35587c5680319a7607d72232ea9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50c68ddb21c8fca65c1d1f164a88d567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea28fa4111c7f351733cef4e7bc56bd9 |
| publicationDate |
2018-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10050116-B2 |
| titleOfInvention |
Semiconductor device structure and method for forming the same |
| abstract |
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of the dielectric layer is under the first hole. The method includes forming a first protection layer over the gate stack and the spacer layer. The method includes forming a second protection layer over the first protection layer. The second protection layer includes a metal compound material, and the first protection layer and the second protection layer includes a same metal element. The method includes removing the second portion of the dielectric layer to form a through hole. The method includes forming a conductive contact structure in the through hole. |
| priorityDate |
2016-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |