| abstract |
A method for performing temporally pulsed chemical vapor deposition (CVD) is provided, including: providing a first reactant configured to adsorb on exposed surfaces of a substrate in a self-limiting manner, the first reactant being provided at a partial pressure so that the first reactant diffuses into a gap feature of the substrate; performing a first purge operation, the first purge operation being configured to partially purge the first reactant, so that gas phase first reactant species remain in the gap feature; providing a second reactant to the process chamber, the second reactant being configured to react with the first reactant to form a film product, including reaction of the provided second reactant with the adsorbed first reactant species, and reaction of the provided second reactant with the gas phase first reactant species in the gap feature; performing a second purge operation. |