| abstract |
A structure and method of making a semiconductor device includes a single-gated vertical field effect transistor (VFET), that has a first fin on a first bottom source/drain region, a gate of a first work force metal (WFM) surrounding the first fin, and a single gate contact connected to the first WFM. Also included is a double-gated VFET, that has a second fin on a second bottom source/drain region, a first gate of the first WFM disposed on a first side of the second fin, a second wider gate of a second WFM disposed on a second side of the second fin, a first gate contact contacting the first narrow gate, and a second gate contact contacting the second wider gate of the second WFM on the second side. |