Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0764e9e75e6a55810f390ac9b89fb18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c84238f0db3bffc6a4cad7e46da31ceb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba6c16587c308d69ca1543cf61a80dc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2823c65ce7c91dfc9410f2f6eaffea7 |
publicationDate |
2018-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10002794-B2 |
titleOfInvention |
Multiple gate length vertical field-effect-transistors |
abstract |
Various embodiments disclose a method for fabricating a semiconductor structure. In one embodiment, the method includes forming a masking layer over at least a first portion of a source contact layer formed on a substrate. At least a second portion of the source contact layer is recessed below the first portion of the source contact layer. The mask layer is removed and a first spacer layer, a replacement gate on the first spacer layer, a second spacer layer on the replacement gate, and an insulating layer on the second spacer layer are formed. First and second trenches are then formed. A first channel layer is epitaxially grown within the first trench. A second channel layer is epitaxially grown within the second trench. A length of the second channel layer is greater than a length of the first channel layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021111121-A1 |
priorityDate |
2015-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |