| abstract |
Methods of an etching film on a substrate are disclosed. In some embodiments, the method comprising a plurality of etching cycles, each etching cycle comprising: exposing the substrate to a first vapor-phase non-metal oxyhalide reactant; and removing excess first vapor-phase non-metal oxyhalide reactant and byproducts from the reaction chamber, wherein the substrate is not contacted with a plasma reactant during the etching cycle. |