| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caa44e16ee81b9ec580a8325ace6080b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0d878a897de396b3e411e3244a342a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_920a76d3a2147f3dec673e8001c0800d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a43cc7ea10631af53a03362f3cbf78e5 |
| publicationDate |
2021-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I740961-B |
| titleOfInvention |
Method of etching copper layer |
| abstract |
The method MT of etching a copper layer in one embodiment of the present invention is a method of etching the etched layer EL contained in the wafer W and containing copper. The wafer W includes an etched layer EL and a mask MK provided on the etched layer EL. The method MT is to repeatedly perform the procedure SQ to etch the etched layer EL. The procedure SQ includes: a first step of generating a first gas in the processing vessel 12 of the plasma processing apparatus 10 containing the wafer W The second step, which is to generate the plasma of the second gas in the processing container 12; and the third step, which is to generate the plasma of the third gas in the processing container 12. The first gas contains hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen, and the third gas contains hydrogen. |
| priorityDate |
2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |