abstract |
Replacement chemistries for the cC 4 nF 8 npassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula C x nH y nF z n, with 1≤x<7, 1≤y≤13, and 1≤z≤13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching. |