| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D11-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D11-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D11-52 |
| filingDate |
2017-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a029f73be78d355478603a67427c5a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def1e66f171cfd7af0ff3e3817c4e5da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acf2fee3c3ab136d773cd735e5e7d1bd |
| publicationDate |
2021-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I731043-B |
| titleOfInvention |
Impurity diffuser composition and method for manufacturing semiconductor substrate |
| abstract |
The subject of the present invention is to provide a semiconductor substrate to which the impurity diffusion component is diffused. Even if a three-dimensional structure having nano-scale microscopic voids on the surface is provided on the surface of the substrate, the entire inner surface of the inner surface including the microvoids can be provided. A diffusing agent composition capable of uniformly coating a semiconductor substrate by which boron can diffuse well and uniformly, and a method for manufacturing a semiconductor substrate using the diffusing agent composition.nn n n n n The solution is to make the impurity diffusion component (A) contain a complex of boron containing a specific structure in the diffusing agent composition containing the impurity diffusion component (A) and the Si compound (B) that can be hydrolyzed to form a silanol group Things. |
| priorityDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |