http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I719388-B

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3720d81f95cb00f5c4e8732a7e0d343e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
filingDate 2019-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d31ea86356b37852423369e38de41b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe602e3d1a9f11a1c2b6091d38fca54e
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publicationDate 2021-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I719388-B
titleOfInvention Negative-type photosensitive resin composition and use thereof
abstract A negative-type photoresist resin composition is disclosed, which comprises: (A) 5 wt% to 20 wt% of a polysiloxane compound obtained by polymerization of plural monomers, wherein the monomers comprise siloxane monomers represented by the following formulas (a-1), (a-2) and (a-3); (B) 6 wt% to 20 wt% of silicate oligomers, comprising a silicate oligomer with low content of alkoxy groups, wherein a content of nthe silicate oligomer with low content of alkoxy groups is ranged from 60% to 100% based on a total weight of the silicate oligomers; (C) 0.1 wt% to 10 wt% of a photo acid generator; and (D) residual solvent. n n nHerein, R 1 to R 6 are defined in the specification. In addition, the present disclosure further provides a use of the aforesaid negative-type photoresist resin composition.
priorityDate 2019-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.