| abstract |
The present invention provides a member for a plasma processing device that has excellent plasma resistance and improves the adhesion strength of a film to a substrate, and a plasma processing device provided with the same. The member (1) for a plasma processing device is provided with: a substrate (2) containing the first element as a metallic element or semi-metal element; and a film (3) on the substrate (2) and containing a rare earth element Oxide, fluoride, or oxyfluoride as the main component; and the amorphous part (4), which is interposed between the substrate (2) and the film (3), and contains the first element, yttrium, oxygen and fluorine At least one of them. |