| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-327 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2017-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_883a27666907e6c0d861c2536d46a7ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0d751b427900613caac95d9f55b7662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_515545f72f85d2255ddd16781c07f6e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_451488d8781191daea8cba6e6df7cc49 |
| publicationDate |
2021-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I717522-B |
| titleOfInvention |
Line edge roughness improvement with photon-assisted plasma process |
| abstract |
A photon-assisted plasma processing method for processing a substrate with a process layer is provided. A process gas is flowed into the chamber. The process gas is formed into a plasma. The process layer is exposed to the plasma. The process layer is illuminated with a light with a wavelength of between 200 nm and 1 micron, while exposing the substrate to the plasma. |
| priorityDate |
2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |