| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-2416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B35-061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-1071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B9-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82c333b8611419592f6a8362c3a3fd0a |
| publicationDate |
2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I715563-B |
| titleOfInvention |
Plasma etching method, pattern forming method, and cleaning method |
| abstract |
An object of the invention is to provide a method of forming a pattern on a film with a favorable selectivity relative to a specific etching target film. The invention provides a plasma etching method that includes a step of etching a film comprising zirconium oxide in a desired pattern formed in a first mask using a plasma generated from a gas composed of hydrogen bromide (HBr) and one or other of boron trichloride (BCl 3 n) and silicon tetrachloride (SiCl 4 n), wherein the base film of the zirconium oxide film is a silicon oxide film or amorphous carbon, and the etching selectivity of the zirconium oxide film with respect to the base film is at least one. |
| priorityDate |
2015-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |