| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2017-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7d77111eb508cb26ff2a3c065b4508f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_915225c0889e64a81f1a613cc4171585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e07051022ff1e5f4d0e393247ed1b91f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8b03d323b6d4155d234686942ffea57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f89831fb0c890397b9fa21867e03cfdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c07d9947b60ca642c4ad6539eb479331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0f6b5672cc71e4c15c6969d70c3429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_457726ea32fdd52528fe9ceab2427536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec8768af0c398a4dfbab209433ad01f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c709991ce437a25e1671f9b2f5fbc5e9 |
| publicationDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I713783-B |
| titleOfInvention |
Self aligned via and method for fabricating the same |
| abstract |
A self-aligned via and a method for fabricated a semiconductor device using a double-trench constrained self alignment process to form the via. The method includes forming a first trench and depositing a first metal into the first trench. Afterwards, the process includes depositing a dielectric layer over the first metal such that a top surface of the dielectric layer is at substantially the same level as the top surface of the first trench. Next, a second trench is formed and a via is formed by etching the portion of the dielectric layer exposed by the overlapping region between the first trench and the second trench. The via exposes a portion of the first metal and a second metal is deposited into the second trench such that the second metal is electrically coupled to the first metal. |
| priorityDate |
2016-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |