| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_697b99145805d3d9a6e7ea3156471904
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50b5f6912fc0f4e56399bf2a89da3ead |
| publicationDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I713486-B |
| titleOfInvention |
Etching method (two) |
| abstract |
Suppresses the erosion of the second area made of silicon nitride and etches the first area made of silicon oxide.nn n n The method of one embodiment includes: (a) The first step is to generate plasma containing fluorocarbon gas processing gas in a processing container containing the object to be processed; (b) The second step is to generate In the processing container of the object to be processed, a plasma of processing gas containing fluorocarbon gas is further generated; and (c) the third step is a deposit formed on the object to be processed by the first and second steps The included fluorocarbon radicals etch the first region. The high-frequency power used to generate plasma in the first step is smaller than the high-frequency power used to generate plasma in the second step. |
| priorityDate |
2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |