| abstract |
The subject of the present invention is to provide a resist underlayer film for lithography, which has high solubility and resistance to resist solvents (solvents used in lithography) required to exhibit good coating film-forming properties. Compared with the agent, the selection ratio of the dry etching speed is smaller.nn n n n n The solution to the problem is a resist underlayer film forming composition containing a phenolic resin containing a reaction between the aromatic ring of the aromatic compound (A) and the hydroxyl-containing aromatic methylol compound (B) The resulting structure (C). The aromatic compound (A) is a component for constituting the structure (C) contained in the phenol resin. The hydroxyl group-containing aromatic hydroxymethyl compound (B) is represented by formula (1).nn n n The hydroxyl-containing aromatic hydroxymethyl compound (B) is 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethylphenol. |