| abstract |
The present invention provides a heat-resistant resist underlayer film forming composition for use in a lithography process for fabricating a semiconductor device. The resist underlayer film forming composition of the present invention contains a polymer having a unit structure represented by the following formula (1): □ ring A and ring B are each a benzene ring, n1, n2 and n3 are 0, and R4 and R6 are hydrogen. Atom, R5 is a naphthyl group. The manufacturing method of the semiconductor device of the present invention comprises the steps of: forming a composition by using the above-mentioned resist underlayer film, forming an underlayer film on the semiconductor substrate, forming a hard mask thereon, and further forming a resist film thereon; a step of etching the underlayer film by patterning a hard mask by a step of etching a hard mask by a resist pattern by a step of forming a resist pattern by light or electron beam irradiation And a step of processing the semiconductor substrate by the patterned underlayer film. |