| abstract |
The invention concerns A method of forming a semiconductor structure comprising : introducing, at selected conditions, hydrogen and helium species in a temporary support (1) to form a plane of weakness (2) at a predetermined depth therein, and to define a superficial layer (3) and a residual part (4) of the temporary support (1); forming on the temporary support (1) an interconnection layer (5); placing at least one semiconductor chip (6) on the interconnection layer (5) ; assembling a stiffener (8) on a backside of the at least one semiconductor chip (6) and providing thermal energy to the temporary support (1) to detach the residual part (4) and provide the semiconductor structure. |