| abstract |
A semiconductor device includes a first interconnect structure over first nsubstrate, a first bonding layer over the first interconnect structure, multiple first bonding pads disposed in a first region of the first bonding layer, the first bonding pads having a first pitch, and multiple second bonding pads disposed in a second region of the first bonding layer, the second region extending between a first edge of the first bonding layer and the first region, the second bonding pads having the first pitch, the multiple second bonding pads including multiple pairs of adjacent second bonding pads, wherein the second bonding pads of each respective pair are connected by a first metal line. |